Description
4Gb: x8, x16 DDR3L-RS SDRAM .
DDR3L-RS SDRAM
EDJ4208EFBG-L.
64 Meg x 8 x 8 banks EDJ4216EFBG-L.
32 Meg x 16 x 8 banks
Description
The 1.
Features
* VDD = VDDQ = 1.35V (1.283
* 1.45V)
* Backward compatible to VDD = VDDQ = 1.5V ±0.075V
Applications
* Differential bidirectional data strobe
* 8n-bit prefetch architecture
* Differential clock inputs (CK, CK#)
* 8 internal banks
* Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
* Programmable CAS (READ) latency (CL)
