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MA4E2514 Low and Medium Barrier Silicon Schottky Diode

MA4E2514 Description

MA4E2514 Series SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair .
The MA4E2514 SURMOUNTTM Diode Tee Series are Silicon Low, and Medium Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Inte.

MA4E2514 Features

* Extremely Low Parasitic Capitance and Inductance
* Surface Mountable in Microwave Circuits, No Wirebonds Required
* Rugged HMIC Construction with Polyimide Scratch Protection
* Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300

MA4E2514 Applications

* The MA4E2514 Family of Surmount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diode

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Datasheet Details

Part number
MA4E2514
Manufacturer
MACOM
File Size
98.36 KB
Datasheet
MA4E2514-MACOM.pdf
Description
Low and Medium Barrier Silicon Schottky Diode

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Low and Medium Barrier Silicon Schottky Diode MACOM
MACOM MA4E2514-like datasheet