MA4E2514 Datasheet - MACOM

MA4E2514, Low and Medium Barrier Silicon Schottky Diode

MA4E2514 Series SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair

Features

* Extremely Low Parasitic Capitance and Inductance
* Surface Mountable in Microwave Circuits, No Wirebonds Required
* Rugged HMIC Construction with Polyimide Scratch Protection
* Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300

Applications

* The MA4E2514 Family of Surmount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diode

MA4E2514-MACOM.pdf