MA4E2532L-1113 Datasheet - Tyco Electronics

MA4E2532L-1113, SURMOUNT Low & Medium Barrier Silicon Schottky Diodes

SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series V 2.00 MA4E2532L-1113 MA4E2532M-1113

Features

* Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility

Applications

* The MA4E2532 1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the dire

MA4E2532L-1113_TycoElectronics.pdf