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MA4E2532L-1113 SURMOUNT Low & Medium Barrier Silicon Schottky Diodes

MA4E2532L-1113 Description

SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series V 2.00 MA4E2532L-1113 MA4E2532M-1113 .
The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave.

MA4E2532L-1113 Features

* Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility

MA4E2532L-1113 Applications

* The MA4E2532 1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the dire

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Datasheet Details

Part number
MA4E2532L-1113
Manufacturer
Tyco Electronics
File Size
137.97 KB
Datasheet
MA4E2532L-1113_TycoElectronics.pdf
Description
SURMOUNT Low & Medium Barrier Silicon Schottky Diodes

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SURMOUNT Low Medium Barrier Silicon Schottky Diodes Tyco Electronics
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