MA4E2532M-1113, MA4E2532L-1113 Datasheet - Tyco Electronics

MA4E2532M-1113, MA4E2532L-1113, SURMOUNT Low & Medium Barrier Silicon Schottky Diodes

SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series V 2.00 MA4E2532L-1113 MA4E2532M-1113

Features

* Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch Protection n Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) n Lower Susceptibility

Applications

* The MA4E2532 1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the dire

MA4E2532L-1113_TycoElectronics.pdf

MA4E2532M-1113 Datasheet Preview — This datasheet PDF includes multiple part numbers: MA4E2532M-1113, MA4E2532L-1113. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MA4E2532M-1113, MA4E2532L-1113

Manufacturer:

Tyco Electronics

File Size:

137.97 KB

Description:

Surmount low & medium barrier silicon schottky diodes.

Note:

This datasheet PDF includes multiple part numbers: MA4E2532M-1113, MA4E2532L-1113.
Please refer to the document for exact specifications by model.

MA4E2532M-1113 Distributors

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MA4E2532L-1113 SURMOUNT Low Medium Barrier Silicon Schottky Diodes Tyco Electronics

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