MA4E2502 Datasheet - MACOM

MA4E2502, Silicon Schottky Diode

SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes MA4E2502 Series Rev.
V4

Features

* Extremely Low Parasitic Capacitance & Inductance
* Surface Mountable in Microwavable Circuits, No Wirebonds Required
* Rugged HMIC Construction with Polyimide Scratch Protection
* Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (3

Applications

* The MA4E2502 Surmount™ Series diodes are silicon low, medium, and high barrier Schottky devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which

MA4E2502-MACOM.pdf