CGHV50200F Datasheet (MACOM)

CGHV50200F, GaN HEMT

The CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sigh

CGHV50200F Features

* 4.4 - 5.0 GHz Operation

* 180 W Typical PSAT

* 11.5 dB Typical Power Gain

* 48% Typical Power Efficiency

* 50 Ohm Internally Matched Applications

* Troposcatter Communications

* Beyond Line of Sight

* BLOS

* Satellite Communi