CGHV59350 Datasheet (Cree)

CGHV59350, GaN HEMT

R1 RES, 5.1OHM, +/- 1%, 1/16W,0603 R2 RES, 10OHM, +/- 1%, 1/16W,0603 C1,C2 CAP, 5.6pF, +/- 0.25 pF,250V, 0603 C3,C8 CAP, 20pF, +/- 0.25 pF,250V, 0603 C4,C9 CAP, 470PF, 5%, 100V, 0603, X C5 CAP, 0.1MF, 1206, 250 V, X7R L1 IND, FERRITE, 220 OHM, 0603 C10 CAP, 1.0UF, 100V, 10%, X7R, 1210 C7

PRELIMINARY CGHV59350 350 W, 5200 - 5900 MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems Cree’s CGHV59350 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV59350 ideal for 5.2 - 5.9 GHz C-Band radar amplifier applications.

The transistor is supplied in a ceramic/metal flange package, type 440217 and 440218.

Package Type: PN: 440217 CGHV59350 and 440

CGHV59350 Features

* 5.2 - 5.9 GHz Operation

* 450 W Typical Output Power

* 10.5 dB Power Gain

* 55% Typical Drain Efficiency

* 50 Ohm Internally Matched