CGHV59070 Datasheet (Cree) - RF Power GaN HEMT

CGHV59070, RF Power GaN HEMT

PRELIMINARY CGHV59070 70 W, 4.4-5.9 GHz, 50 V, RF Power GaN HEMT Cree’s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV59070, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV59070 ideal for linear and compressed amplifier circuits.

The transistor is available in a flang

CGHV59070 Features

* 4.4 - 5.9 GHz