CGHV50200F Datasheet (Cree)

CGHV50200F, GaN HEMT

CGHV50200F 200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT Cree’s CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sight.

The GaN HEMT is matched to 50 ohm, for ease of use.

It is designed for CW, pulse, and linear mode of power amplifier oper

CGHV50200F Features

* 4.4 - 5.0 GHz Operation

* 180 W Typical PSAT

* 11.5 dB Typical Power Gain

* 48% Typical Power Efficiency

* 50 Ohm Internally Matched Applications

* Troposcatter Communications

* Beyond Line of Sight

* BLOS

* Satellite Communi