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2SD1251 - Silicon NPN Transistor

Features

  • Wide area of safe operation. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1251 2SD1251A Collector-emitter voltage 2SD1251 2SD1251A Emitter-base voltage Collector current Peak collector current Base current Collector power dissipation Ta = 25 Tc = 25 Junction tempe.

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Other Datasheets by Kexin Semiconductor

Part Number Description
2SD1251A Silicon NPN Transistor
2SD1250 Silicon NPN Transistor
2SD1252 Silicon NPN Transistor
2SD1252A Silicon NPN Transistor
2SD1253 Silicon NPN Transistor

Full PDF Text Transcription

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SMD Type Transistors Silicon NPN Triple Diffusion Junction Type 2SD1251,2SD1251A TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Wide area of safe operation. 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage 2SD1251 2SD1251A Collector-emitter voltage 2SD1251 2SD1251A Emitter-base voltage Collector current Peak collector current Base current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg VEBO IC ICP IB PC VCEO Symbol VCBO Rating 60 80 60 80 8 4 6 1 1.
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