Part number:
HGTG30N60B3D
Manufacturer:
Intersil Corporation
File Size:
109.09 KB
Description:
N-channel igbt.
HGTG30N60B3D Datasheet (109.09 KB)
Datasheet Details
HGTG30N60B3D Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in
HGTG30N60B3D Datasheet (109.09 KB)
Datasheet Details
HGTG30N60B3D
Intersil Corporation
109.09 KB
N-channel igbt.
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