HGT1S5N120CNDS - 25A 1200V NPT Series N-Channel IGBT

Intersil Corporation

Datasheet Details

Part number	HGT1S5N120CNDS
Manufacturer	Intersil Corporation
File Size	87.10 KB
Description	25A 1200V NPT Series N-Channel IGBT
Datasheet	HGT1S5N120CNDS_IntersilCorporation.pdf

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is developmental type TA49309. The diode used in anti-parallel is developmental type TA49058. The IGBT is ideal for many high voltage switching.

📁 HGT1S5N120CNDS Similar Datasheet

HGT1S10N120BNS - 35A/ 1200V/ NPT Series N-Channel IGBT (Fairchild Semiconductor)
HGT1S11N120CNS - N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60A4DS - N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60A4S9A - N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60B3DS - N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60C3 - N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60C3DS - N-Channel IGBT (Fairchild Semiconductor)
HGT1S12N60C3S - N-Channel IGBT (Fairchild Semiconductor)

Other Datasheets by Intersil Corporation

Published: Mar 23, 2005 |