Datasheet Specifications
- Part number
- HGT1S12N60C3DS
- Manufacturer
- Fairchild Semiconductor
- File Size
- 154.93 KB
- Datasheet
- HGT1S12N60C3DS_FairchildSemiconductor.pdf
- Description
- N-Channel IGBT
Description
HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes This family of MOS gat.
Features
* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in aHGT1S12N60C3DS Distributors
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