HGT1S1N120BNDS - N-Channel IGBT

Intersil Corporation

Datasheet Details

Part number	HGT1S1N120BNDS
Manufacturer	Intersil Corporation
File Size	75.76 KB
Description	N-Channel IGBT
Datasheet	HGT1S1N120BNDS_IntersilCorporation.pdf

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49316. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |