Datasheet Details
- Part number
- HGT1S12N60B3DS
- Manufacturer
- Fairchild Semiconductor
- File Size
- 205.73 KB
- Datasheet
- HGT1S12N60B3DS_FairchildSemiconductor.pdf
- Description
- N-Channel IGBT
HGT1S12N60B3DS Description
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode This fam.HGT1S12N60B3DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used
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