HGT1S15N120C3S - N-Channel IGBT

Intersil Corporation

Datasheet Details

Part number	HGT1S15N120C3S
Manufacturer	Intersil Corporation
File Size	139.56 KB
Description	N-Channel IGBT
Datasheet	HGT1S15N120C3S_IntersilCorporation.pdf

The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.

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Published: Mar 23, 2005 |