Part number:
HGT1S12N60A4DS
Manufacturer:
Fairchild Semiconductor
File Size:
173.18 KB
Description:
N-channel igbt.
HGT1S12N60A4DS_FairchildSemiconductor.pdf
Datasheet Details
HGT1S12N60A4DS Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is the development type TA49335. The diode used
HGT1S12N60A4DS_FairchildSemiconductor.pdf
Datasheet Details
HGT1S12N60A4DS
Fairchild Semiconductor
173.18 KB
N-channel igbt.
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