Datasheet Specifications
- Part number
- HGT1S12N60A4DS
- Manufacturer
- Fairchild Semiconductor
- File Size
- 173.18 KB
- Datasheet
- HGT1S12N60A4DS_FairchildSemiconductor.pdf
- Description
- N-Channel IGBT
Description
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60.
Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. The IGBT used is the development type TA49335. The diode usedHGT1S12N60A4DS Distributors
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