Part number:
HGT1S5N120BNDS
Manufacturer:
Intersil Corporation
File Size:
89.22 KB
Description:
21a/ 1200v/ npt series n-channel igbts with anti-parallel hyperfast diodes.
HGT1S5N120BNDS_IntersilCorporation.pdf
Datasheet Details
HGT1S5N120BNDS Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120). The IGBT is ideal for many high
HGT1S5N120BNDS_IntersilCorporation.pdf
Datasheet Details
HGT1S5N120BNDS
Intersil Corporation
89.22 KB
21a/ 1200v/ npt series n-channel igbts with anti-parallel hyperfast diodes.
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