IRLI3705N HEXFET Power MOSFET

International Rectifier

IRLI3705N Description

l Logic-Level Gate Drive l Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist.= 4.8mm .
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRLI3705N Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mi

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Datasheet Details

Part number: IRLI3705N
Manufacturer: International Rectifier
File Size: 112.71 KB
Datasheet: IRLI3705N_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

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HEXFET Power MOSFET International Rectifier

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