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IRLI2910 N-Channel MOSFET

IRLI2910 Description

isc N-Channel MOSFET Transistor *.

IRLI2910 Features

* Low drain-source on-resistance: RDS(on) ≤ 26mΩ (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

IRLI2910 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±16 ID Drain Current-Continuous 31 IDM Drain Current-Single Pulsed 190 PD Total Dissipation @TC=25℃ 63 Tj Max. Operating Junction Temperature 175 Tstg Storage Te

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Datasheet Details

Part number
IRLI2910
Manufacturer
INCHANGE
File Size
251.44 KB
Datasheet
IRLI2910-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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