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IRLI3103 POWER MOSFET

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Description

PD 9.1377 PRELIMINARY Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dis.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Features

* (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg. , 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel: ++ 81 3 3983 0641 IR SOUTHEAST ASIA: 315 Outram

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic

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