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IRLI3615 HEXFET Power MOSFET

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Description

www.DataSheet4U.com PD - 94390 IRLI3615 HEXFET® Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 1.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number
IRLI3615
Manufacturer
International Rectifier
File Size
131.72 KB
Datasheet
IRLI3615_InternationalRectifier.pdf
Description
HEXFET Power MOSFET

Features

* ø 3 .4 0 (.1 3 3 ) 3 .1 0 (.1 2 3 ) -A 3 .7 0 (.1 4 5 ) 3 .2 0 (.1 2 6 ) 4 .8 0 (.1 8 9 ) 4 .6 0 (.1 8 1 ) 2 .8 0 (.1 1 0 ) 2 .6 0 (.1 0 2 ) L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S O U RC E 7 .10 (.2 8 0 ) 6 .70 (.2 6 3 ) 1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 ) 1 .1 5 (.0 4 5 ) M

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic

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