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IRLI520NPbF Power MOSFET

IRLI520NPbF Description

* Logic *Level Gate Drive * Advanced Process Technology * Isolated Package * High Voltage Isolation = 2.5KVRMS  * Sink to.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

IRLI520NPbF Applications

* The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mi

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