IRLI530N HEXFET Power MOSFET

International Rectifier

Description

PD - 9.1350B PRELIMINARY Logic-Level Gate Drive Advanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead C.
l l IRLI530N HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.

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Datasheet Specifications

Part number: IRLI530N
Manufacturer: International Rectifier
File Size: 168.87 KB
Datasheet: IRLI530N_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* imeters (inches) 10.60 (.417) 10.40 (.409) ø 3.40 (.133) 3.10 (.123) -A3.70 (.145) 3.20 (.126) 4.80 (.189) 4.60 (.181) 2.80 (.110) 2.60 (.102) LE A D A S S IG N ME N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 7.10 (.280) 6.70 (.263) 16.00 (.630) 15.80 (.622) 1.15 (.045) M IN . 1 2 3 NOTES: 1 D IME N

Applications

* The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mic

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IRLI530N HEXFET Power MOSFET International Rectifier

International Rectifier IRLI530N-like datasheet