Datasheet4U Logo Datasheet4U.com

IRLI3705NPBF Power MOSFET

IRLI3705NPBF Description

* Logic *Level Gate Drive * Advanced Process Technology * Isolated Package * High Voltage Isolation = 2.5KVRMS  * Sink to.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

IRLI3705NPBF Applications

* The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. This isolation is equivalent to using a 100 micron mi

📥 Download Datasheet

Preview of IRLI3705NPBF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRLI3705N - HEXFET Power MOSFET (International Rectifier)
  • IRLI3705 - N-Channel MOSFET (INCHANGE)
  • IRLI3103 - POWER MOSFET (International Rectifier)
  • IRLI3215PBF - Advanced Process Technology (International Rectifier)
  • IRLI3303 - HEXFET Power MOSFET (International Rectifier)
  • IRLI3615 - HEXFET Power MOSFET (International Rectifier)
  • IRLI3615PBF - POWER MOSFET (International Rectifier)
  • IRLI3803 - HEXFET Power MOSFET (International Rectifier)

📌 All Tags

Power MOSFET Infineon
Infineon IRLI3705NPBF-like datasheet