IRGP4078D-EPBF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

IRGP4078DPbF IRGP4078D-EP C VCES = 600V INOMINAL = 50A G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND .

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Datasheet Specifications

Part number: IRGP4078D-EPBF
Manufacturer: International Rectifier
File Size: 839.12 KB
Datasheet: IRGP4078D-EPBF-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE (ON) Trench IGBT Technology
* Low Switching Losses
* Maximum Junction temperature 175°C
* 5 µs short circuit SOA
* Square RBSOA
* 100% of the parts tested for ILM
* Positive VCE (ON) Temperature co-efficient
* Ultra-low VF Hy

IRGP4078D-EPBF Distributors

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IRGP4078D-EPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGP4078D-EPBF-like datasheet