Description
PD - 97577 INSULATED GATE BIPOLAR TRANSISTOR .
Features
* Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 5 μS short circuit SOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (ON) Temperature Coefficient Tight
Applications
* Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
* Rugged Transient Performance for Increased Reliability
* Excellent Current Sharing in Parallel Operation
C E C G TO-247AC IRGP4066PbF
C
E C G TO-247AD IRGP4066-EPbF
G Gate