IRG7PH37K10DPBF, IRG7PH37K10D-EPBF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 25A, TC =100°C tSC 10µs,.

📥 Download Datasheet

IRG7PH37K10DPBF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRG7PH37K10DPBF, IRG7PH37K10D-EPBF. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IRG7PH37K10DPBF, IRG7PH37K10D-EPBF
Manufacturer: International Rectifier
File Size: 656.05 KB
Datasheet: IRG7PH37K10D-EPBF-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: IRG7PH37K10DPBF, IRG7PH37K10D-EPBF.
Please refer to the document for exact specifications by model.

Features

* Low VCE(ON) and Switching Losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH37K10DPBF IRG7PH37K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC =

Applications

* Industrial Motor Drive

IRG7PH37K10DPBF Distributors

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IRG7PH37K10D-EPBF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRG7PH37K10DPBF-like datasheet