Datasheet Specifications
- Part number
- IRG7PH37K10D-EPBF
- Manufacturer
- International Rectifier
- File Size
- 656.05 KB
- Datasheet
- IRG7PH37K10D-EPBF-InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
Description
IRG7PH37K10DPbF IRG7PH37K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 25A, TC =100°C tSC 10µs,.
Features
* Low VCE(ON) and Switching Losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH37K10DPBF IRG7PH37K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC =Applications
* Industrial Motor DriveIRG7PH37K10D-EPBF Distributors
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