Description
PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR .
Features
* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Fre
Applications
* Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses
* Rugged transient performance for increased reliability
* Excellent current sharing in parallel operation
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GC
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Applications
* U. P. S We
