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IS41LV85120, IS41C85120 512K x 8 (4-MBIT) DYNAMIC RAM

IS41LV85120 Description

IS41C85120 IS41LV85120 512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE www.datasheet4u.com ISSI .
® PRELIMINARY INFORMATION SEPTEMBER 2001 FEATURES. TTL compatible inputs and outputs. Refresh Interval: 1024 cycles/16 ms.

IS41LV85120 Features

* TTL compatible inputs and outputs
* Refresh Interval: 1024 cycles/16 ms
* Refresh Mode : RAS-Only, CAS-before-RAS (CBR), and Hidden
* JEDEC standard pinout
* Single power supply 5V ± 10% (IS41C85120) 3.3V ± 10% (IS41LV85120)
* Industrail Temperature

IS41LV85120 Applications

* The IS41C85120 and IS41LV85120 are available in a 28-pin, 400-mil SOJ package. KEY TIMING PARAMETERS Parameter Max. RAS Access Time (tRAC) Max. CAS Access Time (tCAC) Max. Column Address Access Time (tAA) Min. Fast Page Mode Cycle Time (tPC) Min. Read/Write Cycle Time (tRC) -35 35 10 18 12 60 -60

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IS41LV85120, IS41C85120. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IS41LV85120, IS41C85120
Manufacturer
Integrated Silicon Solution
File Size
190.69 KB
Datasheet
IS41C85120_IntegratedSiliconSolution.pdf
Description
512K x 8 (4-MBIT) DYNAMIC RAM
Note
This datasheet PDF includes multiple part numbers: IS41LV85120, IS41C85120.
Please refer to the document for exact specifications by model.

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512K 4-MBIT DYNAMIC RAM Integrated Silicon Solution
Integrated Silicon Solution IS41LV85120-like datasheet