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ITCH22180B2E, ITCH22180B2 - High Power RF LDMOS FET

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This datasheet PDF includes multiple part numbers: ITCH22180B2E, ITCH22180B2. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number ITCH22180B2E, ITCH22180B2
Manufacturer Innogration
File Size 294.16 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH22180B2-Innogration.pdf
Note This datasheet PDF includes multiple part numbers: ITCH22180B2E, ITCH22180B2.
Please refer to the document for exact specifications by model.

ITCH22180B2E Product details

Description

The ITCH22180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% .Frequency Gp (dB) P-1dB (dBm) ηD@P-1 (%) P-3dB (dBm)

Features

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