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Innogration (Suzhou) Co., Ltd.
Document Number: ITCH22180B2 Preliminary Datasheet V1.0
2110MHz-2170MHz, 180W, 28V High Power RF LDMOS FETs
Description
The ITCH22180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH22180B2
•Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% .
Frequency
Gp (dB)
P-1dB (dBm) ηD@P-1 (%) P-3dB (dBm) ηD@P-3 (%)
2110 MHz
17.8
52.5
51.8
53.6
55.5
2140 MHz
17.9
52.3
51.5
53.5
55.5
2170 MHz
17.9
52.0
51.2
53.2
55.
ITCH22180B2 Datasheet
