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Innogration (Suzhou) Co., Ltd.
Document Number: ITCH22120B2 Preliminary Datasheet V1.0
2110MHz-2170MHz, 120W, 28V High Power RF LDMOS FETs
Description
The ITCH22120B2 is a 120-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH22120B2
Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 780 mA, Pulse CW, Pulse Width=10 us, Duty cycle=12% .
Frequency
Gp (dB)
P-1dB (dBm) D@P-1 (%) P-3dB (dBm) D@P-3 (%)
2110 MHz
18.9
50.8
53.8
51.8
56.9
2140 MHz
18.8
50.5
52.4
51.6
56.3
2170 MHz
18.5
50.3
50.7
51.5
54.
ITCH22120B2E Datasheet
