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ITCH22160B4E - High Power RF LDMOS FET

Download the ITCH22160B4E datasheet PDF. This datasheet also covers the ITCH22160B4 variant, as both devices belong to the same high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

Description

The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.

It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.

Typ

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Excellent thermal stability, low HCI drift.
  • Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
  • Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Symbol Value Unit VDSS 70 Vdc VGS -10 to +10 Vdc 1/6 Innogration (Suzhou) Co. , Ltd. Document Number: ITCH22160B4 Prelim.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ITCH22160B4-Innogration.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ITCH22160B4E
Manufacturer Innogration
File Size 928.63 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH22160B4E Datasheet

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Other Datasheets by Innogration

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Full PDF Text Transcription

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Innogration (Suzhou) Co., Ltd. Document Number: ITCH22160B4 Preliminary Datasheet V1.0 2000MHz-2200MHz, 160W, 28V High Power RF LDMOS FETs Description The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH22160B4 Typical Performance of Single Section (On Innogration fixture with device soldered): VDD =28 Volts, IDQ =600 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% . ITCH22160B4E Freq (MHz) Gmax (dB) P-1dB (dBm) P-3dB (dBm) D@P-3 (%) 2110 17.4 49.1 49.9 54.4 2140 17.6 48.7 49.6 54.6 2170 17.2 48.3 49.3 54.
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