ITCH22160B4 - High Power RF LDMOS FET

Innogration

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Datasheet Details

Part number	ITCH22160B4
Manufacturer	Innogration
File Size	928.63 KB
Description	High Power RF LDMOS FET
Datasheet	ITCH22160B4-Innogration.pdf

ITCH22160B4 Product details

Description

The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz. Typical Performance of Single Section (On Innogration fixture with device soldered): VDD =28 Volts, IDQ =600 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Internally Matched for Ease of Use.
Excellent thermal stability, low HCI drift.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Symbol Value Unit VDSS 70 Vdc VGS -10 to +10 Vdc 1/6 Innogration (Suzhou) Co. , Ltd. Document Number: ITCH22160B4 Prelim.

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Published: Aug 5, 2018 |