Description
The ITCH22160B4 is a 160-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2000 to 2200 MHz.
Typical Performance of Single Section (On Innogration fixture with device soldered): VDD =28 Volts, IDQ =600 mA, Pulse CW, Pulse Width=20 us, Duty cycle=10% .
Features
- High Efficiency and Linear Gain Operations.
- Integrated ESD Protection.
- Internally Matched for Ease of Use.
- Excellent thermal stability, low HCI drift.
- Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
- Pb-free, RoHS-compliant
Table 1. Maximum Ratings Rating
Drain--Source Voltage Gate--Source Voltage
Symbol
Value
Unit
VDSS
70
Vdc
VGS
-10 to +10
Vdc
1/6
Innogration (Suzhou) Co. , Ltd. Document Number: ITCH22160B4 Prelim.
ITCH22160B4-Innogration.pdf