PTFB090901FA - Thermally-Enhanced High Power RF LDMOS FET

Infineon

PTFB090901FA Datasheet Preview — Preview of PTFB090901FA PDF

Datasheet Details

Part number	PTFB090901FA
Manufacturer	Infineon ↗
File Size	223.44 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFB090901FA-Infineon.pdf

PTFB090901FA Product details

Description

The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power ampliﬁer applications in the 920 to 960 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced packages. Manufactured with Inﬁneon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB090901EA Package H-36265-2 PTFB090901FA Package H-37265-2 PTFB090901EA PTFB090901FA Gain (dB) Efficiency (%) Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz 23 60 22 Gain 21 50 40 20 30 19 20.

📁 PTFB090901FA Similar Datasheet

PTFB182503EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB182503FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB183408SV - High Power RF LDMOS Field Effect Transistor (Infineon Technologies)
PTFB191501E - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB191501F - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB192503EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB192503FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB201402FC - High Power RF LDMOS Field Effect Transistor (Wolfspeed)

Other Datasheets by Infineon

PTFB090901EA - Thermally-Enhanced High Power RF LDMOS FET
PTFB091507FH - Thermally-Enhanced High Power RF LDMOS FET
PTFB091802FC - Thermally-Enhanced High Power RF LDMOS FET
PTFB093608SV - Thermally-Enhanced High Power RF LDMOS FET
PTFB183404E - High Power RF LDMOS Field Effect Transistors
PTFB183404F - High Power RF LDMOS Field Effect Transistors

Published: Feb 21, 2016 |