PTFB091507FH - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PTFB091507FH
Manufacturer	Infineon
File Size	473.18 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFB091507FH-Infineon.pdf

The PTFB091507FH is an LDMOS FET intended for use in multistandard cellular power amplifier applications in the 920 to 960 MHz frequency band.

include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB091507FH Package H-34288-4/2 Gain (dB) Drain Efficiency (%) Power Sweep, CW VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz, 21.0 20.5 Gain 20.0 19.5 19.0 18.5 18.0 41 Efficiency 43 45 47 49 51 Output Power (dBm) 70 60 50 40 30 20 10 53 Features.
Broadband i.

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Published: Feb 21, 2016 |