PTFB183404E - High Power RF LDMOS Field Effect Transistors

Name: PTFB183404E
SKU: PTFB183404E-1081565

Infineon

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Datasheet Details

Part number	PTFB183404E
Manufacturer	Infineon
File Size	590.61 KB
Description	High Power RF LDMOS Field Effect Transistors
Datasheet	PTFB183404E-Infineon.pdf

PTFB183404E Product details

Description

The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFB183404E Package H-36275-8 PTFB183404F Package H-37275-6/2 IMD & ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6A, ƒ = 1880 MHz, 3GPP WCDMA, PAR = 8:1, 10 MHz carrier spacing, BW = 3.84 MHz -25 35 -30 30 -35 IMD.

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Published: Nov 27, 2016 |