PTFB193404F - Thermally-Enhanced High Power RF LDMOS FETs

Infineon

The PTFB193404F by Infineon is a Thermally-Enhanced High Power RF LDMOS FETs. Below is the official datasheet preview.

📥 Download Datasheet

PTFB193404F Thermally-Enhanced High Power RF LDMOS FETs by Infineon - Datasheet Preview — Official preview page of the **PTFB193404F** Thermally-Enhanced High Power RF LDMOS FETs datasheet (Infineon).

Datasheet Details

Part number	PTFB193404F
Manufacturer	Infineon
File Size	434.69 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFB193404F-Infineon.pdf
Additional preview pages of the PTFB193404F datasheet.

PTFB193404F Product details

Description

The PTFB193404F is a 340‑watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band.

Features

include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured with Infineon’s advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFB193404F Package H-37275-6/2 IMD, ACPR (dBc) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 30 V, IDQ = 2.6 A, ƒ = 1990 MHz, 3GPP WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing, BW = 3.84 MHz -20 -25 -30 -35 -40 -45 -50 -55 -60 36 40 Efficiency 35 3.

📁 PTFB193404F Similar Datasheet

PTFB191501E - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB191501F - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB192503EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB192503FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB182503EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB182503FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon Technologies)
PTFB183408SV - High Power RF LDMOS Field Effect Transistor (Infineon Technologies)
PTFB201402FC - High Power RF LDMOS Field Effect Transistor (Wolfspeed)

Other Datasheets by Infineon

PTFB183404E - High Power RF LDMOS Field Effect Transistors
PTFB183404F - High Power RF LDMOS Field Effect Transistors
PTFB090901EA - Thermally-Enhanced High Power RF LDMOS FET
PTFB090901FA - Thermally-Enhanced High Power RF LDMOS FET
PTFB091507FH - Thermally-Enhanced High Power RF LDMOS FET
PTFB091802FC - Thermally-Enhanced High Power RF LDMOS FET

Published: Nov 27, 2016 |