PTFA071701F, PTFA071701E Thermally-Enhanced High Power RF LDMOS FETs

Infineon

Description

PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 * 770 MHz Descript.
The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band.

📥 Download Datasheet

PTFA071701F Datasheet Preview — This datasheet PDF includes multiple part numbers: PTFA071701F, PTFA071701E. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: PTFA071701F, PTFA071701E
Manufacturer: Infineon ↗
File Size: 278.36 KB
Datasheet: PTFA071701E_Infineon.pdf
Description: Thermally-Enhanced High Power RF LDMOS FETs
Note: This datasheet PDF includes multiple part numbers: PTFA071701F, PTFA071701E.
Please refer to the document for exact specifications by model.

Features

* include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA071701E
* Package H-36248-2 PTFA071701F
* Package H-37248-2 Two-tone Dri

PTFA071701F Distributors

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PTFA071701E Thermally-Enhanced High Power LDMOS FETs Infineon

Infineon PTFA071701F-like datasheet