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PTFA071701E - Thermally-Enhanced High Power RF LDMOS FETs

PTFA071701E Description

PTFA071701E PTFA071701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 725 * 770 MHz Descript.
The PTFA071701E and PTFA071701F are 170-watt, LDMOS FETs designed for use in cellular power amplifiers in the 725 to 770 MHz frequency band.

PTFA071701E Features

* include internal I/O matching, and thermally-enhanced, ceramic open-cavity packages. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA071701E
* Package H-36248-2 PTFA071701F
* Package H-37248-2 Two-tone Dri

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Thermally-Enhanced High Power LDMOS FETs Infineon
Infineon PTFA071701E-like datasheet