Datasheet Details
- Part number
- IPP086N10N3G
- Manufacturer
- Infineon ↗
- File Size
- 757.25 KB
- Datasheet
- IPP086N10N3G-Infineon.pdf
- Description
- Power-Transistor
IPP086N10N3G Description
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor .
IPP086N10N3G Features
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO 252) ID
100 V 8.2 mW 80 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qual
📁 Related Datasheet
📌 All Tags