Datasheet4U.com

2ED2110S06M - 650V high-side and low-side gate driver

Infineon

The 2ED2110S06M by Infineon is a 650V high-side and low-side gate driver. Below is the official datasheet preview.

📥 Download Datasheet

2ED2110S06M 650V high-side and low-side gate driver by Infineon - Datasheet Preview — Official preview page of the 2ED2110S06M 650V high-side and low-side gate driver datasheet (Infineon).

Datasheet Details

Part number	2ED2110S06M
Manufacturer	Infineon
File Size	1.28 MB
Description	650V high-side and low-side gate driver
Datasheet	2ED2110S06M-Infineon.pdf
Additional preview pages of the 2ED2110S06M datasheet.

2ED2110S06M Product details

Description

The 2ED2110S06M is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Features

Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology.
Negative VS transient immunity of 100 V.
Floating channel designed for bootstrap operation.
Operating voltages (VS node) up to + 650 V.
Maximum bootstrap voltage (VB node) of + 675 V.
Integrated ultra-fast, low resistance bootstrap diode.
Logic operational up to.
11 V on VS Pin.
Negative voltage tolerance on inputs of.
5 V.
Independent.

📁 2ED2110S06M Similar Datasheet

2ED020I12-F - Dual IGBT Driver (eupec GmbH)
2ED300C17 - Dual IGBT Driver (Eupec)
2EDL1S - Power Entry Module (Tyco)
2EDL1SC - Power Entry Module (Tyco)
2EDL1SCM - Power Entry Module (Tyco)
2EDL1SM - Power Entry Module (Tyco)
2EDL4 - Power Entry Module (Tyco)
2EDL4C - Power Entry Module (Tyco)

Other Datasheets by Infineon

2ED2104S06F - 650V half bridge gate driver
2ED21064S06J - 650V high-side and low-side gate driver
2ED2106S06F - 650V high-side and low-side gate driver
2ED21084S06J - 650V half bridge gate driver
2ED2108S06F - 650V half bridge gate driver
2ED21091S06F - 650V half bridge gate driver

Published: May 21, 2025 |