2SK667 - N-Channel MOSFET Transistor

Inchange Semiconductor

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Datasheet Details

Part number	2SK667
Manufacturer	Inchange Semiconductor
File Size	242.35 KB
Description	N-Channel MOSFET Transistor
Datasheet	2SK667-InchangeSemiconductor.pdf

2SK667 Product details

Description

Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous PD Total Dissipation @TC=25℃ TJ Max.Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 400 V ±20 V 8 A 80 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-

Features

Drain Current.
ID=8A@ TC=25℃.
Drain Source Voltage- : VDSS= 400V(Min).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Jun 25, 2016 |