2SD1716 - Power Transistor

Inchange Semiconductor

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Datasheet Details

Part number	2SD1716
Manufacturer	Inchange Semiconductor
File Size	213.74 KB
Description	Power Transistor
Datasheet	2SD1716_InchangeSemiconductor.pdf

2SD1716 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min.) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SB1161 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications.

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Published: Sep 22, 2009 |