Datasheet4U Logo Datasheet4U.com

2SD1706 - Silicon NPN Power Transistor

📥 Download Datasheet

Preview of 2SD1706 PDF
datasheet Preview Page 2

Datasheet Details

Part number 2SD1706
Manufacturer Inchange Semiconductor
File Size 216.00 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD1706_InchangeSemiconductor.pdf

2SD1706 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) Good Linearity of hFE Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 7A Complement to Type 2SB1155 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-B

📁 2SD1706 Similar Datasheet

  • 2SD1700 - NPN SILICON TRANSISTOR (NEC)
  • 2SD1701 - NPN SILICON TRANSISTOR (NEC)
  • 2SD1702 - NPN Transistor (NEC)
  • 2SD1705 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1707 - Silicon NPN Transistor (Panasonic Semiconductor)
  • 2SD1710 - NPN Transistor (INCHANGE)
  • 2SD1710A - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SD1710C - NPN Triple Diffused Planar Silicon Transistor (Sanyo Semicon Device)
Other Datasheets by Inchange Semiconductor
Published: |