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2SD1714 - Power Transistor

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2SD1714 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SB1159 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications.

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