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2SD1713 - Power Transistor

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2SD1713 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SB1158 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications.

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